LOW COST SOLAR CELLS FORMED USING A CHALCOGENIZATION RATE MODIFIER

Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as...

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Bibliographische Detailangaben
Hauptverfasser: JACKREL, DAVID, DICKEY, KATHERINE, WOODRUFF, JACOB
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form.