BORON-DOPED REFRACTORY MATERIAL HAVING A SIAION MATRIX

The invention relates to a fritted refractory material comprising a refractory aggregate bonded by a matrix, the matrix being at least 5 and less than 60 wt% of the material, said matrix comprising, in the weight thereof, a crystallized SiAION phase having the formula SixAIyOuNv, where: x is greater than or equal to 0 and less than or equal to 1; y is greater than 0 and less than or equal to 1; u is greater than or equal to 0 and less than or equal to 1; v is greater than 0 and less than or equal to 1; and at least one of the stoichiometric indices x, y, u, or v is equal to 1. Said material comprises: content greater than 5 wt% in said SiAION phase; boron content that is not in the form of a hexagonal BN phase and is greater than 0.05 wt% and less than 3.0 wt%; content less than 10 wt% in the BN hexagonal phase; and content less than 5 wt% in the Si3N4 phase, the weight percentages being on the basis of said material.