ACTIVE MATRIX SUBSTRATE, PRODUCTION METHOD, AND DISPLAY DEVICE

Disclosed is an active matrix substrate (5) on which pixels, each having a thin film transistor (18) and a pixel electrodes (19) connected to the thin film transistor (18), are disposed in a matrix, and that includes a base material (5a) on which the pixels in a matrix are formed. In a contact hole...

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Bibliographische Detailangaben
1. Verfasser:	OCHI HISAO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	Disclosed is an active matrix substrate (5) on which pixels, each having a thin film transistor (18) and a pixel electrodes (19) connected to the thin film transistor (18), are disposed in a matrix, and that includes a base material (5a) on which the pixels in a matrix are formed. In a contact hole portion (H), by anodically oxidizing a three-layered metal film (metal film) (21), an anodic oxidation film (29) is formed on the three-layered metal film (21) so as to fill a contact hole of a protective layer (27), with an end portion of the anodic oxidation film (29) being placed under an insulating layer (28). In the contact hole portion (H), the pixel electrode (19) and the three-layered metal film (21) are connected to each other via the anodic oxidation film (29).