Light emitting diode device and producing method thereof
A method for producing a light emitting diode device (21) includes the steps of preparing a base board (16); allowing a light semiconductor layer (3) where an electrode portion (4) is provided at one side in a thickness direction to be disposed in opposed relation to the base board (16), and the ele...
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Hauptverfasser: | , , , |
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A method for producing a light emitting diode device (21) includes the steps of preparing a base board (16); allowing a light semiconductor layer (3) where an electrode portion (4) is provided at one side in a thickness direction to be disposed in opposed relation to the base board (16), and the electrode portion (4) to be electrically connected to a terminal (15), so that the light semiconductor layer (3) is flip-chip mounted on the base board (16); forming an encapsulating resin layer (14) containing a light reflecting component at the other side of the base board (16) so as to cover the light semiconductor layer and (3) the electrode portion (4); removing the other side portion of the encapsulating resin layer (14) so as to expose the light semiconductor layer (3); and forming a phosphor layer (17) formed in a sheet state so as to be in contact with the other surface of the light semiconductor layer (3). |
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