Phase shift mask, semiconductor device and method of manufacturing the same

There is provided a semiconductor device, comprising a substrate (101) that includes an integrated circuit region (1), first and second interlayer insulation films (108, 111, 112) formed above the substrate, and a reinforcing structure comprising a main-wall part (2) and a sub-wall part (3) which ar...

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Bibliographische Detailangaben
Hauptverfasser:	Watanabe, Kenichi, Kawano, Michiari, Sukegawa, Kazuo, Mitani, Junichi, Sawada, Toyoji, Hasegawa, Takumi, Namba, Hiroshi
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	There is provided a semiconductor device, comprising a substrate (101) that includes an integrated circuit region (1), first and second interlayer insulation films (108, 111, 112) formed above the substrate, and a reinforcing structure comprising a main-wall part (2) and a sub-wall part (3) which are formed in the first and second interlayer insulation films, wherein the main-wall part surrounds the integrated circuit region in a periphery thereof and the sub-wall part is provided apart from the main-wall part in a corner region of the semiconductor device and is located between the integrated circuit region and the first bend section of the main-wall part. Both the main-wall part and the sub-wall part are formed by metal-filled trenches (131, 132) in the first and second interlayer insulation films.