METHOD FOR REMOVING DEPOSITS

For the plasma assisted manufacture of semiconductors, photovoltaic cells, thin film transistor liquid crystal displays and micro-electromechanical systems, and for chamber cleaning, F2 or COF2 is applied as etchant. It was found that a plasma emitter providing microwaves with a frequency of equal t...

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Bibliographische Detailangaben
Hauptverfasser:	RIVA, MARCELLO, MROSS, STEFAN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL CLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICALMETHODS OTHER THAN ELECTROLYSIS COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	For the plasma assisted manufacture of semiconductors, photovoltaic cells, thin film transistor liquid crystal displays and micro-electromechanical systems, and for chamber cleaning, F2 or COF2 is applied as etchant. It was found that a plasma emitter providing microwaves with a frequency of equal to or greater than 15 MHz provides plasma very effectively.