Method of implanting ions
A method of implanting ions is disclosed which comprises the steps of: (a) producing a volume of gas phase molecules of material of the form C n H x wherein n and x are integers, and n ‰¥ 2, and x ‰¥ 0; (b) ionizing the C n H x molecules to form C n H y + or C n H y - , wherein y is an integer such...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A method of implanting ions is disclosed which comprises the steps of: (a) producing a volume of gas phase molecules of material of the form C n H x wherein n and x are integers, and n ‰¥ 2, and x ‰¥ 0; (b) ionizing the C n H x molecules to form C n H y + or C n H y - , wherein y is an integer such that y>0; and (c) accelerating the ionized molecules by an electric field into a target. |
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