Sputtering cathode having a non-bonded semiconducting target

A sputtering cathode 10 is generally provided. The sputtering cathode 10 can include a semiconducting target 12 (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface 14 and a back surface 16 opposite to the sputtering surface 14. A backing plate 18 can be p...

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Bibliographische Detailangaben
Hauptverfasser: FELDMAN-PEABODY, SCOTT DANIEL, O'KEEFE, PATRICK LYNCH, GOSSMAN, ROBERT DWAYNE, BLACK, RUSSELL WELDON
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A sputtering cathode 10 is generally provided. The sputtering cathode 10 can include a semiconducting target 12 (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface 14 and a back surface 16 opposite to the sputtering surface 14. A backing plate 18 can be positioned facing the back surface 16 of the target 12 and non-bonded to the back surface 16 of the target 12. A non-bonding attachment mechanism can removably hold the target 12 within the sputtering cathode 10 such that the back surface 16 is facing the backing plate 18 during sputtering.