Improved method of stripping hot melt etch resists from semiconductors

Hot melt etch resist is selectively applied to an anti-reflective coating or a selective emitter on a semiconductor wafer. The exposed portions of the anti-reflective coating or selective emitter are etched away using an inorganic acid containing etch to expose the semiconductor surface. The hot mel...

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Bibliographische Detailangaben
Hauptverfasser:	Barr, Robert K, Dong, Hua
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Hot melt etch resist is selectively applied to an anti-reflective coating or a selective emitter on a semiconductor wafer. The exposed portions of the anti-reflective coating or selective emitter are etched away using an inorganic acid containing etch to expose the semiconductor surface. The hot melt etch resist is then stripped from the semiconductor with an alkaline stripper which does not compromise the electrical integrity of the semiconductor. The exposed semiconductor is then metalized to form current tracks.