HIGH EFFICIENCY EPITAXIAL CHEMICAL VAPOR DEPOSITION (CVD) REACTOR

The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may...

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Bibliographische Detailangaben
1. Verfasser: KAMIAN, GEORGE
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may be reverse-flow depletion mode reactors, which tends to provide uniform film thickness and a high degree of chemical utilization.