METHOD FOR PREPARING A THIN FILM OF THIOSPINELS

The invention relates to a method for preparing a thin film of at least one compound of formula AM4X8, where: A is Ga or Ge; M is V, Nb, Ta or Mo; and X is S or Se. Said method includes the following steps: i) a step of forming a thin film of at least one compound of formula AM4X8 by the magnetron s...

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Bibliographische Detailangaben
Hauptverfasser:	MARTIAL, JULIE, JANOD, ETIENNE, SOUCHIER, EMELINE, CARIO, LAURENT, CORRAZE, BENOIT, BESLAND, MARIE-PAULE
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to a method for preparing a thin film of at least one compound of formula AM4X8, where: A is Ga or Ge; M is V, Nb, Ta or Mo; and X is S or Se. Said method includes the following steps: i) a step of forming a thin film of at least one compound of formula AM4X8 by the magnetron spraying of a target including at least one compound of said formula AM4X8, in an atmosphere including at least one inert gas; and ii) a step of annealing the thin film formed during step i) by heat treating; wherein step i) and/or step ii) are carried out in the presence of sulphur when X is S or in the presence of selenium when X is Se.