Light emitting device

A light emitting device includes: a conductive support member (210); a first conductive layer (220) disposed on the conductive support member; a second conductive layer (240) disposed on the first conductive layer; a light emitting structure comprising a first semiconductor layer (230) disposed on t...

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Bibliographische Detailangaben
Hauptverfasser:	CHO, HYUN KYONG, KWON, HO KI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING HEATING LIGHT SOURCES NOT OTHERWISE PROVIDED FOR LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATINGELEMENTS LIGHTING MECHANICAL ENGINEERING NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF WEAPONS
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Beschreibung
Zusammenfassung:	A light emitting device includes: a conductive support member (210); a first conductive layer (220) disposed on the conductive support member; a second conductive layer (240) disposed on the first conductive layer; a light emitting structure comprising a first semiconductor layer (230) disposed on the second conductive layer, a second semiconductor layer (250) disposed between the first semiconductor layer and the second conductive layer, and an active layer (260) disposed between the first semiconductor layer and the second semiconductor layer; and an insulation layer (230) disposed between the first conductive layer and the second conductive layer, wherein the first conductive layer includes a first expansion part penetrating through the second conductive layer, the second semiconductor layer and the active layer, and includes a second expansion part (220c) extending from the first expansion part and being disposed in the first semiconductor layer, wherein the insulation layer is disposed on the lateral surface of the first expansion part, and wherein the lateral surface of the second expansion part contacts with the first semiconductor layer.