DEVICE AND METHOD FOR SIMULTANEOUSLY MICROSTRUCTURING AND DOPING SEMICONDUCTOR SUBSTRATES

The invention relates to a device and a method for simultaneous microstructuring and doping of semiconductor substrates with boron, in which the semiconductor substrate is treated with a laser beam coupled into a liquid jet, the liquid jet comprising at least one boron compound. The method according...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	RODOFILI, ANDREAS, GRANEK, FILIP, MESEC, MATTHIAS, MAYER, KUNO, KROSSING, INGO, KNAPP, CARSTEN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COMPOUNDS THEREOF CRYSTAL GROWTH CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY NON-METALLIC ELEMENTS PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SOLDERING OR UNSOLDERING TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	The invention relates to a device and a method for simultaneous microstructuring and doping of semiconductor substrates with boron, in which the semiconductor substrate is treated with a laser beam coupled into a liquid jet, the liquid jet comprising at least one boron compound. The method according to the invention is used in the field of solar cell technology and also in other fields of semiconductor technology in which a locally delimited boron doping is important.