Method for sputtering a resistive transparent thin film for use in cadmium telluride based photovoltaic devices

Methods for depositing a resistive transparent buffer thin film layer (16) on a substrate (12) are provided. The methods can include cold sputtering a resistive transparent buffer layer on a substrate (e.g., at a sputtering temperature of about 10° C to about 100° C) in a sputtering atmosphere comprising about 0.01% to about 5% by volume water vapor (e.g., about 0.05% to about 1% by volume water vapor). The resistive transparent buffer layer can then be annealed at an anneal temperature of about 450° C to about 700° C. The methods of depositing a resistive transparent buffer thin film layer on a substrate can be used in a method of manufacturing a cadmium thin film photovoltaic device by forming cadmium sulfide layer (18) on the resistive transparent buffer layer, and forming a cadmium telluride layer (22) on the cadmium sulfide layer.