Method for the manufacture of a semiconductor device

The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a first element forming layer (501a); a second element forming layer (502a); a layer containing a conductive particle (305), configured to adhere the first element forming layer and the second element forming layer; and a conductive layer (525) which functions as an antenna included in the first element forming layer or the second element forming layer, wherein the first element forming layer includes a first transistor (111,113) provided over an insulating layer, and a first conductive layer (124a,124c) which functions as a source wiring or a drain wiring of the first transistor; wherein the second element forming layer includes a memory element (454) comprising a third conductive layer (451), an organic compound layer or a phase change layer, and a fourth conductive layer laminated in this order; and wherein the first conductive layer (124a,124b) which functions as the source wiring or the drain wiring of the first transistor is electrically connected to the third conductive layer (451) or the conductive layer (525) which functions as the antenna through the conductive particle.