Press-fit diode resistant to changes in temperature

Press-fit diode resistant to changes in temperature

The diode has a semiconductor chip attached between a base and a head-wire (6) by a solder layer (5) and closing a PN-transition (30) at an outer edge of the chip. The solder layer in an outer region is variably removed relative to the outer edge, where the region is at short distance from the PN-tr...

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Hauptverfasser: Jaros, Rolf, Suelzle, Helmut, Goerlach, Alfred, Spitz, Richard
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Jaros, Rolf
Suelzle, Helmut
Goerlach, Alfred
Spitz, Richard
description The diode has a semiconductor chip attached between a base and a head-wire (6) by a solder layer (5) and closing a PN-transition (30) at an outer edge of the chip. The solder layer in an outer region is variably removed relative to the outer edge, where the region is at short distance from the PN-transition. An insulation layer (10) with a combination of oxide and silicon nitride is provided over a solderless region of the chip, and a Schottky diode e.g. trench-junction-barrier-Schottky diode and trench-metal oxide semiconductor (MOS)-barrier-Schottky diode, is provided within the chip.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Press-fit diode resistant to changes in temperature
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