Press-fit diode resistant to changes in temperature

The diode has a semiconductor chip attached between a base and a head-wire (6) by a solder layer (5) and closing a PN-transition (30) at an outer edge of the chip. The solder layer in an outer region is variably removed relative to the outer edge, where the region is at short distance from the PN-tr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Jaros, Rolf, Suelzle, Helmut, Goerlach, Alfred, Spitz, Richard
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The diode has a semiconductor chip attached between a base and a head-wire (6) by a solder layer (5) and closing a PN-transition (30) at an outer edge of the chip. The solder layer in an outer region is variably removed relative to the outer edge, where the region is at short distance from the PN-transition. An insulation layer (10) with a combination of oxide and silicon nitride is provided over a solderless region of the chip, and a Schottky diode e.g. trench-junction-barrier-Schottky diode and trench-metal oxide semiconductor (MOS)-barrier-Schottky diode, is provided within the chip.