Light emitting diode and light emitting diode package
Provided are a light emitting diode and a light emitting diode package. The light emitting diode (100) includes a transparent substrate (110), a light emitting structure (145), and a reflection layer (105). The light emitting structure includes a first conductive type semiconductor layer (130), an a...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | Provided are a light emitting diode and a light emitting diode package. The light emitting diode (100) includes a transparent substrate (110), a light emitting structure (145), and a reflection layer (105). The light emitting structure includes a first conductive type semiconductor layer (130), an active layer (140), and a second conductive type semiconductor layer (150) that are disposed on a top surface of the substrate (110). The reflection layer (105) is disposed on a bottom surface (110a) of the substrate (110). The bottom surface of the substrate has a surface roughness of about 1 nm to about 15 nm in root mean square (RMS) value. |
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