Light emitting diode

Provided is a light emitting diode (100,100A,100B,100C,100D). In one embodiment, the light emitting diode includes: a light emitting structure including a first conductive type semiconductor layer (130), a second conductive type semiconductor layer (150), and an active layer (140) between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and an anti-current leakage layer (145) between the active layer (140) and the second conductive type semiconductor layer (150). The first conductive type semiconductor layer includes a plurality of grooves. The active layer (140) is formed along the grooves. A surface of the anti-current leakage layer adjacent to the second conductive type semiconductor layer (150) is flat.