ELECTRIC CIRCUIT SWITCHING DEVICE

A switching device (10) has a main IGFET (11) having a Schottky barrier diode D3 for blocking an inverse current built therein, a protective switch means (12), and a protective switch control means (13). The protective switch means (12) is connected in between a drain electrode D and a gate electrod...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HARA MASATO, SHINODA AKIHIRO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTINGELECTRIC POWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS GENERATION PULSE TECHNIQUE SEMICONDUCTOR DEVICES SYSTEMS FOR STORING ELECTRIC ENERGY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A switching device (10) has a main IGFET (11) having a Schottky barrier diode D3 for blocking an inverse current built therein, a protective switch means (12), and a protective switch control means (13). The protective switch means (12) is connected in between a drain electrode D and a gate electrode G of the main IGFET (11). The protective switch control means (13) turns on the protective switch means (12) when an inverse voltage is impressed to the main IGFET (ill). Thereby, the main IGFET (11) is protected from the inverse voltage.