GLASS-CERAMIC-BASED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND METHOD FOR MAKING THE SAME
The present invention relates to a semiconductor-on-insulator structure including a semiconductor component comprised of substantially single-crystal semiconductor material layer and a single-crystal semiconductor material with an enhanced oxygen content layer; an oxide glass material layer; and a g...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | The present invention relates to a semiconductor-on-insulator structure including a semiconductor component comprised of substantially single-crystal semiconductor material layer and a single-crystal semiconductor material with an enhanced oxygen content layer; an oxide glass material layer; and a glass-ceramic layer. |
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