Light emitting device comprising metal oxide semiconductor layer and pattern for light extraction on active layer

Light emitting device comprising metal oxide semiconductor layer and pattern for light extraction on active layer

Provided is a light emitting device, which includes a first conductive type semiconductor layer (130), an active layer (140), a roughness pattern (145), and a second conductive type semiconductor layer (150). The active layer is disposed on the first conductive type semiconductor layer. The roughnes...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Son, Hyo Kun
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided is a light emitting device, which includes a first conductive type semiconductor layer (130), an active layer (140), a roughness pattern (145), and a second conductive type semiconductor layer (150). The active layer is disposed on the first conductive type semiconductor layer. The roughness pattern is disposed on the active layer. The second conductive type semiconductor layer is disposed on the roughness pattern and the active layer, and includes a metal oxide.