Double-sided semiconductor structure and method for manufacturing the same
A semiconductor structure (100; 200; 300) comprising; a substrate (5; 302) of semiconductor material of a first type of conductivity; a first semiconductor layer (7) set in direct electrical contact with the substrate on a first side (2) of the substrate; a second semiconductor layer (8) set in dire...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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