Double-sided semiconductor structure and method for manufacturing the same

Double-sided semiconductor structure and method for manufacturing the same

A semiconductor structure (100; 200; 300) comprising; a substrate (5; 302) of semiconductor material of a first type of conductivity; a first semiconductor layer (7) set in direct electrical contact with the substrate on a first side (2) of the substrate; a second semiconductor layer (8) set in dire...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MICCICHE', MONICA, BAZZANO, GAETANO, FRAZZETTO, NICOLO, GRIMALDI, ANTONIO GIUSEPPE
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure (100; 200; 300) comprising; a substrate (5; 302) of semiconductor material of a first type of conductivity; a first semiconductor layer (7) set in direct electrical contact with the substrate on a first side (2) of the substrate; a second semiconductor layer (8) set in direct electrical contact with the substrate on a second side (4) of the substrate; a first active electronic device (10; 303) formed in the first semiconductor layer (7); and a second active electronic device (12; 62; 305) formed in the second semiconductor layer (8).