Method of producing high purity semi-insulating single crystal silicon carbide wafer

Method of producing high purity semi-insulating single crystal silicon carbide wafer

A method of producing high quality bulk silicon carbide single crystal in a seeded growth system is disclosed. Undesired curvature of the growth surface within the first 10 mm of growth is avoided according to this method.

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Bibliographische Detailangaben
1. Verfasser: JENNY, JASON, RONALD
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A method of producing high quality bulk silicon carbide single crystal in a seeded growth system is disclosed. Undesired curvature of the growth surface within the first 10 mm of growth is avoided according to this method.