SYSTEMS AND METHODS FOR GROWING MONOCRYSTALLINE SILICON INGOTS BY DIRECTIONAL SOLIDIFICATION

SYSTEMS AND METHODS FOR GROWING MONOCRYSTALLINE SILICON INGOTS BY DIRECTIONAL SOLIDIFICATION

Systems and methods are provided for producing monocrystalline materials such as silicon, the monocrystalline materials being usable in semiconductor and photovoltaic applications. A crucible (50) is received in a furnace (10) for growing a monocrystalline ingot, the crucible (50) initially containi...

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Bibliographische Detailangaben
Hauptverfasser: KHATTAK, CHANDRA, P, RAVI, BHUVARAGASAMY, G, PARTHASARATHY, SANTHANA, RAGHAVAN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:Systems and methods are provided for producing monocrystalline materials such as silicon, the monocrystalline materials being usable in semiconductor and photovoltaic applications. A crucible (50) is received in a furnace (10) for growing a monocrystalline ingot, the crucible (50) initially containing a single seed crystal (20) and feedstock material (90), where the seed crystal (20) is at least partially melted, and the feedstock material (90) is completely melted in the crucible (50), which is followed by a growth and solidification process. Growth of monocrystalline materials such as silicon ingots is achieved by directional solidification, in which heat extraction during growth phases is achieved using insulation (14) that is movable relative to a crucible (50) containing feedstock (90). A heat exchanger (200) also is provided to control heat extraction from the crucible (50) during the growth and solidification process to achieve monocrystalline growth.