Power semiconductor device with a power semiconductor element bonded to a substrate by a Sn-Sb-Cu solder and with a terminal bonded to the substrate by a Sn-Ag-based or Sn-Ag-Cu-based solder and manufacturing method therefor
A power semiconductor device includes a substrate (14), an element circuit pattern (16) formed on the substrate (14) and made of Cu optionally covered with an electroless-plated Ni-P layer, and a power semiconductor element (40,42) bonded to the element circuit pattern (16) by a solder (30,32), wher...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Nishibori, Hiroshi Ueshima, Minoru Yoshihara, Kunihiro |
| description | A power semiconductor device includes a substrate (14), an element circuit pattern (16) formed on the substrate (14) and made of Cu optionally covered with an electroless-plated Ni-P layer, and a power semiconductor element (40,42) bonded to the element circuit pattern (16) by a solder (30,32), wherein the solder (30,32) is an alloy of Sn, Sb, and Cu, the Sb content being in the range of 6.5 to 8 weight % and the Cu content being in the range of 0.5 to 1 weight %. A terminal (52) is bonded to a terminal circuit pattern (18, 20) formed on the substrate (14) by a terminal solder (50) made of a Sn-Ag-based or Sn-Ag-Cu-based unleaded solder. A heat sink (46) is bonded to a surface pattern (22) formed on the bottom surface the substrate (14) by a solder (34) having the same composition as the Sn-Sb-Cu solder (30, 32). |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2312622B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2312622B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2312622B13</originalsourceid><addsrcrecordid>eNqNjTGOwjAQRdNsgXa5w1wgBUGihwi0ZaRsj8b2D7EU25E9BnHbPQpGy0oUFFSj__X-m0X124ULIiU4q4M3WUuIZHC2GnSxMhLT_ILABAcvpEoDQxIKl7JKEllA6lpi7-te1W2mFCZTBOzNv1EQnfU8Pc1lxAvB9lQrToUoL_9imx_Nk9WxzwNrydH6EznIGMxdGDGE-FV9DDwlLB_3s6LD_qf9rjGHI9LMGh5y3HfNetVsmma3Wr-B3ACK1Wqt</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Power semiconductor device with a power semiconductor element bonded to a substrate by a Sn-Sb-Cu solder and with a terminal bonded to the substrate by a Sn-Ag-based or Sn-Ag-Cu-based solder and manufacturing method therefor</title><source>esp@cenet</source><creator>Nishibori, Hiroshi ; Ueshima, Minoru ; Yoshihara, Kunihiro</creator><creatorcontrib>Nishibori, Hiroshi ; Ueshima, Minoru ; Yoshihara, Kunihiro</creatorcontrib><description>A power semiconductor device includes a substrate (14), an element circuit pattern (16) formed on the substrate (14) and made of Cu optionally covered with an electroless-plated Ni-P layer, and a power semiconductor element (40,42) bonded to the element circuit pattern (16) by a solder (30,32), wherein the solder (30,32) is an alloy of Sn, Sb, and Cu, the Sb content being in the range of 6.5 to 8 weight % and the Cu content being in the range of 0.5 to 1 weight %. A terminal (52) is bonded to a terminal circuit pattern (18, 20) formed on the substrate (14) by a terminal solder (50) made of a Sn-Ag-based or Sn-Ag-Cu-based unleaded solder. A heat sink (46) is bonded to a surface pattern (22) formed on the bottom surface the substrate (14) by a solder (34) having the same composition as the Sn-Sb-Cu solder (30, 32).</description><language>eng ; fre ; ger</language><subject>ALLOYS ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FERROUS OR NON-FERROUS ALLOYS ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; METALLURGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; TREATMENT OF ALLOYS OR NON-FERROUS METALS ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191023&DB=EPODOC&CC=EP&NR=2312622B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191023&DB=EPODOC&CC=EP&NR=2312622B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nishibori, Hiroshi</creatorcontrib><creatorcontrib>Ueshima, Minoru</creatorcontrib><creatorcontrib>Yoshihara, Kunihiro</creatorcontrib><title>Power semiconductor device with a power semiconductor element bonded to a substrate by a Sn-Sb-Cu solder and with a terminal bonded to the substrate by a Sn-Ag-based or Sn-Ag-Cu-based solder and manufacturing method therefor</title><description>A power semiconductor device includes a substrate (14), an element circuit pattern (16) formed on the substrate (14) and made of Cu optionally covered with an electroless-plated Ni-P layer, and a power semiconductor element (40,42) bonded to the element circuit pattern (16) by a solder (30,32), wherein the solder (30,32) is an alloy of Sn, Sb, and Cu, the Sb content being in the range of 6.5 to 8 weight % and the Cu content being in the range of 0.5 to 1 weight %. A terminal (52) is bonded to a terminal circuit pattern (18, 20) formed on the substrate (14) by a terminal solder (50) made of a Sn-Ag-based or Sn-Ag-Cu-based unleaded solder. A heat sink (46) is bonded to a surface pattern (22) formed on the bottom surface the substrate (14) by a solder (34) having the same composition as the Sn-Sb-Cu solder (30, 32).</description><subject>ALLOYS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjTGOwjAQRdNsgXa5w1wgBUGihwi0ZaRsj8b2D7EU25E9BnHbPQpGy0oUFFSj__X-m0X124ULIiU4q4M3WUuIZHC2GnSxMhLT_ILABAcvpEoDQxIKl7JKEllA6lpi7-te1W2mFCZTBOzNv1EQnfU8Pc1lxAvB9lQrToUoL_9imx_Nk9WxzwNrydH6EznIGMxdGDGE-FV9DDwlLB_3s6LD_qf9rjGHI9LMGh5y3HfNetVsmma3Wr-B3ACK1Wqt</recordid><startdate>20191023</startdate><enddate>20191023</enddate><creator>Nishibori, Hiroshi</creator><creator>Ueshima, Minoru</creator><creator>Yoshihara, Kunihiro</creator><scope>EVB</scope></search><sort><creationdate>20191023</creationdate><title>Power semiconductor device with a power semiconductor element bonded to a substrate by a Sn-Sb-Cu solder and with a terminal bonded to the substrate by a Sn-Ag-based or Sn-Ag-Cu-based solder and manufacturing method therefor</title><author>Nishibori, Hiroshi ; Ueshima, Minoru ; Yoshihara, Kunihiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2312622B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>ALLOYS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TRANSPORTING</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>Nishibori, Hiroshi</creatorcontrib><creatorcontrib>Ueshima, Minoru</creatorcontrib><creatorcontrib>Yoshihara, Kunihiro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nishibori, Hiroshi</au><au>Ueshima, Minoru</au><au>Yoshihara, Kunihiro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Power semiconductor device with a power semiconductor element bonded to a substrate by a Sn-Sb-Cu solder and with a terminal bonded to the substrate by a Sn-Ag-based or Sn-Ag-Cu-based solder and manufacturing method therefor</title><date>2019-10-23</date><risdate>2019</risdate><abstract>A power semiconductor device includes a substrate (14), an element circuit pattern (16) formed on the substrate (14) and made of Cu optionally covered with an electroless-plated Ni-P layer, and a power semiconductor element (40,42) bonded to the element circuit pattern (16) by a solder (30,32), wherein the solder (30,32) is an alloy of Sn, Sb, and Cu, the Sb content being in the range of 6.5 to 8 weight % and the Cu content being in the range of 0.5 to 1 weight %. A terminal (52) is bonded to a terminal circuit pattern (18, 20) formed on the substrate (14) by a terminal solder (50) made of a Sn-Ag-based or Sn-Ag-Cu-based unleaded solder. A heat sink (46) is bonded to a surface pattern (22) formed on the bottom surface the substrate (14) by a solder (34) having the same composition as the Sn-Sb-Cu solder (30, 32).</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP2312622B1 |
| source | esp@cenet |
| subjects | ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WELDING WORKING BY LASER BEAM |
| title | Power semiconductor device with a power semiconductor element bonded to a substrate by a Sn-Sb-Cu solder and with a terminal bonded to the substrate by a Sn-Ag-based or Sn-Ag-Cu-based solder and manufacturing method therefor |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T00%3A43%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Nishibori,%20Hiroshi&rft.date=2019-10-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2312622B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |