Power semiconductor device with a power semiconductor element bonded to a substrate by a Sn-Sb-Cu solder and with a terminal bonded to the substrate by a Sn-Ag-based or Sn-Ag-Cu-based solder and manufacturing method therefor

A power semiconductor device includes a substrate (14), an element circuit pattern (16) formed on the substrate (14) and made of Cu optionally covered with an electroless-plated Ni-P layer, and a power semiconductor element (40,42) bonded to the element circuit pattern (16) by a solder (30,32), wher...

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Bibliographische Detailangaben
Hauptverfasser:	Nishibori, Hiroshi, Ueshima, Minoru, Yoshihara, Kunihiro
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A power semiconductor device includes a substrate (14), an element circuit pattern (16) formed on the substrate (14) and made of Cu optionally covered with an electroless-plated Ni-P layer, and a power semiconductor element (40,42) bonded to the element circuit pattern (16) by a solder (30,32), wherein the solder (30,32) is an alloy of Sn, Sb, and Cu, the Sb content being in the range of 6.5 to 8 weight % and the Cu content being in the range of 0.5 to 1 weight %. A terminal (52) is bonded to a terminal circuit pattern (18, 20) formed on the substrate (14) by a terminal solder (50) made of a Sn-Ag-based or Sn-Ag-Cu-based unleaded solder. A heat sink (46) is bonded to a surface pattern (22) formed on the bottom surface the substrate (14) by a solder (34) having the same composition as the Sn-Sb-Cu solder (30, 32).