Endpoint detection for photomask etching
Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber (10; 900; 2500) with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced proc...
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| creator | GRIMBERGEN, MICHAEL N |
| description | Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber (10; 900; 2500) with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask. |
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The substrate support member has at least two optical components disposed therein for use in endpoint detection. 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The apparatus provides a plasma etch chamber (10; 900; 2500) with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Endpoint detection for photomask etching |
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