SEED CRYSTAL FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND SILICONE CARBIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME

SEED CRYSTAL FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND SILICONE CARBIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME

There is provided a seed crystal for silicon carbide single crystal growth, which is capable of suppressing crystal defects that arise from the interface between a seed crystal and graphite, and producing a high quality silicon carbide single crystal having a low crystal defect density, with good re...

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Bibliographische Detailangaben
Hauptverfasser: OYANAGI NAOKI, KOGOI HISAO
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:There is provided a seed crystal for silicon carbide single crystal growth, which is capable of suppressing crystal defects that arise from the interface between a seed crystal and graphite, and producing a high quality silicon carbide single crystal having a low crystal defect density, with good reproducibility. As such a seed crystal for silicon carbide single crystal growth, use is made of a seed crystal for silicon carbide single crystal growth (13) which is attached to the lid of a graphite crucible charged with a raw material silicon carbide powder, and which has a seed crystal (4) formed of silicon carbide having one surface defined as a growth surface (4a) for growing a silicon carbide single crystal by a sublimation method, and a carbon film (12) formed on the surface (4b) opposite to the growth surface of the seed crystal (4), wherein the film density of the carbon film (12) is 1.2 g/cm 3 to 3.3 g/cm 3 .