Gallium nitride substrate

A gallium nitride (GaN) substrate hard to break and capable of enhancing a production yield is provided. The GaN substrate comprises a primary surface. The primary surface is tilted at an angle in the range of 20 to 160 degrees with respect to the C-plane of the substrate. The substrate has a fractu...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	Hachigo, Akihiro
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A gallium nitride (GaN) substrate hard to break and capable of enhancing a production yield is provided. The GaN substrate comprises a primary surface. The primary surface is tilted at an angle in the range of 20 to 160 degrees with respect to the C-plane of the substrate. The substrate has a fracture toughness of more than or equal to 1.36 MN/m 3/2 .