Guard ring for semiconductor devices

Guard ring for semiconductor devices

A guard ring (122) is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard rin...

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Bibliographische Detailangaben
Hauptverfasser: CERUZZI, ALEX D, LIU, LINLIN, POPHRISTIC, MILAN, SHELTON, BRYAN S, ZHU, TING GANG, MURPHY, MICHAEL
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A guard ring (122) is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact (110) is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.