Method for manufacturing silicon single crystal

A silicon single crystal rod (24) is pulled from a silicon melt (13) molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal rod and a temperature of the heater, thereby controlling a di...

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Bibliographische Detailangaben
Hauptverfasser: WAKABAYASHI, DAISUKE, FURUKAWA, JUN, KITAMURA, KOUNOSUKE, SATO, SATOSHI, SAITO, MASAO
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:A silicon single crystal rod (24) is pulled from a silicon melt (13) molten by a heater (17), and a change in diameter of the silicon single crystal rod every predetermined time is fed back to a pulling speed of the silicon single crystal rod and a temperature of the heater, thereby controlling a diameter of the silicon single crystal rod. A PID control in which a PID constant is changed on a plurality of stages is applied to a method which controls the pulling speed of the silicon single crystal rod so that the silicon single crystal rod has a target diameter and a method which controls a heater temperature so that the silicon single crystal rod has the target temperature. A set pulling speed for the silicon single crystal rod is set so that V/G becomes constant, and an actual pulling speed is accurately controlled so as to match with the set pulling speed, thereby suppressing a fluctuation in diameter of the single crystal rod.