Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminium, indium, gallium) nitride ((AI, In,Ga)N) substrates for opto-electronic and electronic devices

A homoepitaxial III-V nitride article, comprising a III-V nitride homoepitaxial layer deposited on a free-standing III-V nitride material substrate, wherein said III-V nitride homoepitaxial layer has a dislocation density of less than 1E6 dislocations per square centimeter, and the article comprises...

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Bibliographische Detailangaben
Hauptverfasser:	VAUDO, ROBERT, P, XU, HUEPING, KEOGH, DAVID, M, FLYNN, JEFFREY, S, LANDINI, BARBARA E, BRANDES, GEORGES, R
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A homoepitaxial III-V nitride article, comprising a III-V nitride homoepitaxial layer deposited on a free-standing III-V nitride material substrate, wherein said III-V nitride homoepitaxial layer has a dislocation density of less than 1E6 dislocations per square centimeter, and the article comprises one of the following features: (i) oxidized material is provided between the III-V nitride homoepitaxial layer and the free-standing III-V nitride material substrate; (ii) an epi interlayer is provided between the III-V nitride homoepitaxial layer and the free-standing III-V nitride material substrate; and (iii) the free-standing III-V nitride material substrate is offcut, and the III-V nitride homoepitaxial layer comprises non-(0001) homoepitaxial step flow crystal growth.