Avalanche photodiode
A reverse reach-through avalanche photodiode may include a first region (202) comprising substantially intrinsic semiconductor material, the first region (202) having a first side and a second side opposite to the first side. The photodiode may also include a second region (204) comprising highly-do...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A reverse reach-through avalanche photodiode may include a first region (202) comprising substantially intrinsic semiconductor material, the first region (202) having a first side and a second side opposite to the first side. The photodiode may also include a second region (204) comprising highly-doped p-type semiconductor material formed proximate to the first side of the first region (202). The photodiode may additionally include a third region (216) comprising highly-doped n-type semiconductor material formed proximate to the second side of the first region (202). The photodiode may further include a fourth region (214) comprising one of: (i) highly-doped p-type semiconductor formed between the first region (202) and the third region (216), or (ii) highly-doped n-type semiconductor formed between the first region (202) and the second region (204). |
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