Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates

The invention is related to a method of obtaining bulk mono-crystalline gallium-containing nitride by crystallization on a seed from supercritical ammonia-containing solution, containing ions of Group I metals and ions of acceptor dopant. According to said method at process conditions the molar rati...

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Bibliographische Detailangaben
Hauptverfasser:	DWILINSKI, ROBERT TOMASZ, GARCZYNSKI, JERZY, DORADZINSKI, ROMAN MAREK, SIERZPUTOWSKI, LESZEK PIOTR, RUDZINSKI, MARIUSZ
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention is related to a method of obtaining bulk mono-crystalline gallium-containing nitride by crystallization on a seed from supercritical ammonia-containing solution, containing ions of Group I metals and ions of acceptor dopant. According to said method at process conditions the molar ratio of acceptor dopant ions to supercritical ammonia-containing solvent is at least 0.0001. The invention covers also bulk mono-crystalline gallium-containing nitride, obtainable by the inventive method. The invention further relates to substrates for epitaxy made of mono-crystalline gallium-containing nitride and devices manufactured on such substrates.