METHOD OF FORMING A MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT

In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by fabricating a carbon nano-tube (CNT) seeding layer by depositing a silicon-g...

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Bibliographische Detailangaben
1. Verfasser:	SCHRICKER, APRIL, D
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES STATIC STORES TRANSPORTING
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Beschreibung
Zusammenfassung:	In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by fabricating a carbon nano-tube (CNT) seeding layer by depositing a silicon-germanium layer above the substrate, patterning and etching the CNT seeding layer, and selectively fabricating CNT material on the CNT seeding layer. Numerous other aspects are provided.