Group III nitride based quantum well light emitting device structures with an indium containing capping structure

A light emitting diode comprises: an n-type Group III nitride layer (12); a Group III nitride based superlattice (16) on the n-type Group III nitride layer, the superlattice having at least two periods of alternating layers; a Group III nitride based light emitting diode active region (18) on the su...

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Bibliographische Detailangaben
Hauptverfasser:	Bergmann, Michael John, Emerson, David Todd
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	A light emitting diode comprises: an n-type Group III nitride layer (12); a Group III nitride based superlattice (16) on the n-type Group III nitride layer, the superlattice having at least two periods of alternating layers; a Group III nitride based light emitting diode active region (18) on the superlattice opposite the n-type Group III nitride layer, wherein the light emitting diode active region provides photon emission due to carrier recombination therein; and a Group III nitride capping layer (22) including aluminum (Al) on the light emitting diode active region, the Group III nitride capping layer having a higher Al composition in a region distal from the light emitting diode active region than is present in a region proximate the light emitting diode active region.