Method of manufacturing an ultra-high-density capacity comprising pillar-shaped capacitors formed on both sides of a substrate

Method of manufacturing an ultra-high-density capacity comprising pillar-shaped capacitors formed on both sides of a substrate

The present invention describes an ultra High-Density Capacitor design, integrated in a semiconductor substrate, preferably a Si substrate, by using both wafer sides. The capacitors are pillar-shaped and comprise electrodes (930,950) separated by a dielectric layer (940). Via connections (920) are p...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LE CORNEC, FRANCOIS, NEUILLY, FRANCOIS
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention describes an ultra High-Density Capacitor design, integrated in a semiconductor substrate, preferably a Si substrate, by using both wafer sides. The capacitors are pillar-shaped and comprise electrodes (930,950) separated by a dielectric layer (940). Via connections (920) are provided in trenches that go through the whole thickness of the wafer.