BACKSIDE ILLUMINATED IMAGING SENSOR WITH BACKSIDE P+ DOPED LAYER

BACKSIDE ILLUMINATED IMAGING SENSOR WITH BACKSIDE P+ DOPED LAYER

A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P+ doped layers are formed within the semiconductor layer. An imaging pixel having a photodiode is formed within the semiconductor layer, where the photodiode is an N− region formed...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: RHODES, HOWARD, E, NOZAKI, HIDETOSHI
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P+ doped layers are formed within the semiconductor layer. An imaging pixel having a photodiode is formed within the semiconductor layer, where the photodiode is an N− region formed within the P-type region of the semiconductor layer between the frontside P+ doped layer and the backside P+ doped layer.