Integrated circuit comprising PIN diodes
A semiconductor substrate (1) is provided with an "I" region (2) having intrinsic conductivity or a low doping of a first type of conductivity, which can be a low-doped epitaxial layer on a surface of the substrate. A PSUB well (3) of the first type of conductivity and a PIN region (4, 5)...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A semiconductor substrate (1) is provided with an "I" region (2) having intrinsic conductivity or a low doping of a first type of conductivity, which can be a low-doped epitaxial layer on a surface of the substrate. A PSUB well (3) of the first type of conductivity and a PIN region (4, 5) of the opposite second type of conductivity are implanted in the "I" region (2). Further components (7, 8, 9) of the integrated circuit are arranged in the PSUB well (3). |
---|