METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER
A manufacturing method of a semiconductor device that includes in its structure a semiconductor layer and a dielectric layer deposited on the semiconductor layer, the method including the steps of: semiconductor layer forming of forming the semiconductor layer; surface treating of performing a surfa...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | NAMEGAYA, Takeshi TANIGUCHI, Hidehiro KATAYAMA, Etsuji |
| description | A manufacturing method of a semiconductor device that includes in its structure a semiconductor layer and a dielectric layer deposited on the semiconductor layer, the method including the steps of: semiconductor layer forming of forming the semiconductor layer; surface treating of performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed in the semiconductor layer forming; dielectric-film forming of forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed in the surface treating; and heat treating of changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed in the dielectric-film forming. Accordingly, effects of the dielectric film can be fully demonstrated. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2214272A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2214272A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2214272A43</originalsourceid><addsrcrecordid>eNrjZCj2dQ3x8HdRcPMPUnBzdArydHYM8fRzVwh29fV09vdzCXUOAcq4uIZ5Orvq4BB19vf1DfUD6_T3U3AMCHAMcgwJDdZRcPRzQdPi4xjsGsTDwJqWmFOcyguluRkU3FxDnD10Uwvy41OLCxKTU_NSS-JdA4yMDE2MzI0cTYyJUAIAI804ZA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER</title><source>esp@cenet</source><creator>NAMEGAYA, Takeshi ; TANIGUCHI, Hidehiro ; KATAYAMA, Etsuji</creator><creatorcontrib>NAMEGAYA, Takeshi ; TANIGUCHI, Hidehiro ; KATAYAMA, Etsuji</creatorcontrib><description>A manufacturing method of a semiconductor device that includes in its structure a semiconductor layer and a dielectric layer deposited on the semiconductor layer, the method including the steps of: semiconductor layer forming of forming the semiconductor layer; surface treating of performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed in the semiconductor layer forming; dielectric-film forming of forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed in the surface treating; and heat treating of changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed in the dielectric-film forming. Accordingly, effects of the dielectric film can be fully demonstrated.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170628&DB=EPODOC&CC=EP&NR=2214272A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170628&DB=EPODOC&CC=EP&NR=2214272A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAMEGAYA, Takeshi</creatorcontrib><creatorcontrib>TANIGUCHI, Hidehiro</creatorcontrib><creatorcontrib>KATAYAMA, Etsuji</creatorcontrib><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER</title><description>A manufacturing method of a semiconductor device that includes in its structure a semiconductor layer and a dielectric layer deposited on the semiconductor layer, the method including the steps of: semiconductor layer forming of forming the semiconductor layer; surface treating of performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed in the semiconductor layer forming; dielectric-film forming of forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed in the surface treating; and heat treating of changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed in the dielectric-film forming. Accordingly, effects of the dielectric film can be fully demonstrated.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZCj2dQ3x8HdRcPMPUnBzdArydHYM8fRzVwh29fV09vdzCXUOAcq4uIZ5Orvq4BB19vf1DfUD6_T3U3AMCHAMcgwJDdZRcPRzQdPi4xjsGsTDwJqWmFOcyguluRkU3FxDnD10Uwvy41OLCxKTU_NSS-JdA4yMDE2MzI0cTYyJUAIAI804ZA</recordid><startdate>20170628</startdate><enddate>20170628</enddate><creator>NAMEGAYA, Takeshi</creator><creator>TANIGUCHI, Hidehiro</creator><creator>KATAYAMA, Etsuji</creator><scope>EVB</scope></search><sort><creationdate>20170628</creationdate><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER</title><author>NAMEGAYA, Takeshi ; TANIGUCHI, Hidehiro ; KATAYAMA, Etsuji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2214272A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAMEGAYA, Takeshi</creatorcontrib><creatorcontrib>TANIGUCHI, Hidehiro</creatorcontrib><creatorcontrib>KATAYAMA, Etsuji</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAMEGAYA, Takeshi</au><au>TANIGUCHI, Hidehiro</au><au>KATAYAMA, Etsuji</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER</title><date>2017-06-28</date><risdate>2017</risdate><abstract>A manufacturing method of a semiconductor device that includes in its structure a semiconductor layer and a dielectric layer deposited on the semiconductor layer, the method including the steps of: semiconductor layer forming of forming the semiconductor layer; surface treating of performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed in the semiconductor layer forming; dielectric-film forming of forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed in the surface treating; and heat treating of changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed in the dielectric-film forming. Accordingly, effects of the dielectric film can be fully demonstrated.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP2214272A4 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T14%3A19%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAMEGAYA,%20Takeshi&rft.date=2017-06-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2214272A4%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |