METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, COMMUNICATION APPARATUS, AND SEMICONDUCTOR LASER

A manufacturing method of a semiconductor device that includes in its structure a semiconductor layer and a dielectric layer deposited on the semiconductor layer, the method including the steps of: semiconductor layer forming of forming the semiconductor layer; surface treating of performing a surface treatment for removing a residual carbon compound, on a surface of the semiconductor layer formed in the semiconductor layer forming; dielectric-film forming of forming a dielectric film under a depositing condition corresponding to a surface state after the surface treatment, on at least a part of the surface of the semiconductor layer on which the surface treatment has been performed in the surface treating; and heat treating of changing a crystalline state of at least a partial region of the semiconductor layer by performing a heat treatment on the semiconductor layer on which the dielectric film has been formed in the dielectric-film forming. Accordingly, effects of the dielectric film can be fully demonstrated.