Stable Power Devices on Low-Angle Off-Cut Silicon Carbide Crystals
A method of forming a silicon carbide-based device, comprising: forming a silicon carbide drift layer having a planar surface that forms an off-axis angle with a direction of less than 8°, wherein the silicon carbide drift layer is formed by chemical vapor deposition including a chlorine containing...
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| creator | Zhang, Qingchun Burk, Albert Capell, Doyle Craig Agarwal, Anant Sumakeris, Joseph O'Loughlin, Michael |
| description | A method of forming a silicon carbide-based device, comprising: forming a silicon carbide drift layer having a planar surface that forms an off-axis angle with a direction of less than 8°, wherein the silicon carbide drift layer is formed by chemical vapor deposition including a chlorine containing compound. |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Stable Power Devices on Low-Angle Off-Cut Silicon Carbide Crystals |
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