Stable Power Devices on Low-Angle Off-Cut Silicon Carbide Crystals

Stable Power Devices on Low-Angle Off-Cut Silicon Carbide Crystals

A method of forming a silicon carbide-based device, comprising: forming a silicon carbide drift layer having a planar surface that forms an off-axis angle with a direction of less than 8°, wherein the silicon carbide drift layer is formed by chemical vapor deposition including a chlorine containing...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zhang, Qingchun, Burk, Albert, Capell, Doyle Craig, Agarwal, Anant, Sumakeris, Joseph, O'Loughlin, Michael
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A method of forming a silicon carbide-based device, comprising: forming a silicon carbide drift layer having a planar surface that forms an off-axis angle with a direction of less than 8°, wherein the silicon carbide drift layer is formed by chemical vapor deposition including a chlorine containing compound.