COMPOSITIONS AND METHODS FOR MODIFYING A SURFACE SUITED FOR SEMICONDUCTOR FABRICATION

The method of the present invention comprises providing a wafer including a first, second and third material; contacting the third material in the presence of a working liquid with abrasive composites fixed to an abrasive article; and moving the wafer until an exposed surface of the wafer is substan...

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Bibliographische Detailangaben
Hauptverfasser:	KAISAKI, DAVID A, CLARK, PHILIP G, HARDY, L. CHARLES, CLARK, JOHN C, SAVU, PATRICIA M, KRANZ, HEATHER K, GAGLIARDI, JOHN J, WOOD, THOMAS E
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	The method of the present invention comprises providing a wafer including a first, second and third material; contacting the third material in the presence of a working liquid with abrasive composites fixed to an abrasive article; and moving the wafer until an exposed surface of the wafer is substantially planar and comprises at least one area of exposed third material and one area of exposed second material. The components of the working liquid include an aqueous solvent; a pH buffer exhibiting a pKa greater than 7 and comprising a basic pH adjusting agent and a multidentate acidic complexing agent; and a non-ionic surfactant. The nonionic surfactant exhibits a hydrophile-lipophile balance of at least about 4. The working liquid is substantially free of loose abrasive particles and exhibits a pH of about 7-12.