Method for determining performance of a semiconductor device and method for determination of parameters of a semiconductor device

A semiconductor junction comprised by a semiconductor device is represented as a parallel connection of a first and a second series connection (DF, DR), wherein the first series connection (DF) comprises a first current source (If) and a first resistor (Rf) and the second series connection (DR) comprises a second current source (Ir) and a second resistor (Rr). A first current of the first current source (If) is calculated depending on a junction voltage (Vd) across the semiconductor junction as a function of a first parameter set. A second current of the second current source (Ir) is calculated depending on the junction voltage (Vd) as a function of a second parameter set. A junction current over the semiconductor junction is calculated depending on the first and second current. Herein, the first and the second parameter set are selected such that the junction current is mainly determined by the first current, if the junction voltage (Vd) is a forward voltage, and the junction current is determined by the first and the second current if the junction voltage (Vd) is a reverse voltage.