METHOD FOR MANUFACTURING SEMICONDUCTOR CRYSTAL OF NITRIDE OF ELEMENT BELONGING TO GROUP-III, SEMICONDUCTOR SUBSTRATE FORMED OF NITRIDE OF ELEMENT BELONGING TO GROUP-III, AND SEMICONDUCTOR LIGHT EMISSION DEVICE

The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the gro...

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Hauptverfasser: KIYOMI, KAZUMASA, FUJITO, KENJI
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:The method for producing a group III nitride semiconductor crystal of the invention comprises a step of preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing step includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.