METHOD OF CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR DEVICE
A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass% of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass% of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KONNO, TOMOHISA ANDOU, MICHIAKI |
| description | A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass% of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass% of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium hydrogen sulfate, the chemical mechanical polishing aqueous dispersion having a mass ratio (A)/(B) of the component (A) to the component (B) of 1 to 3 and a pH of 4 to 5 and being able to simultaneously polish at least two films that form a polishing target surface and are selected from a polysilicon film, a silicon nitride film, and a silicon oxide film. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2128893A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2128893A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2128893A13</originalsourceid><addsrcrecordid>eNrjZLD3dQ3x8HdR8HdTcPZw9fV0dvRR8HV19nD0AzMD_H08gz08_dxBCoJB8v5-LqHOIf5BCi6uYZ7OrjwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JN41wMjQyMLC0tjR0JgIJQAStSnS</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>KONNO, TOMOHISA ; ANDOU, MICHIAKI</creator><creatorcontrib>KONNO, TOMOHISA ; ANDOU, MICHIAKI</creatorcontrib><description>A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass% of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass% of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium hydrogen sulfate, the chemical mechanical polishing aqueous dispersion having a mass ratio (A)/(B) of the component (A) to the component (B) of 1 to 3 and a pH of 4 to 5 and being able to simultaneously polish at least two films that form a polishing target surface and are selected from a polysilicon film, a silicon nitride film, and a silicon oxide film.</description><language>eng ; fre ; ger</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NANOTECHNOLOGY ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091202&DB=EPODOC&CC=EP&NR=2128893A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091202&DB=EPODOC&CC=EP&NR=2128893A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KONNO, TOMOHISA</creatorcontrib><creatorcontrib>ANDOU, MICHIAKI</creatorcontrib><title>METHOD OF CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR DEVICE</title><description>A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass% of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass% of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium hydrogen sulfate, the chemical mechanical polishing aqueous dispersion having a mass ratio (A)/(B) of the component (A) to the component (B) of 1 to 3 and a pH of 4 to 5 and being able to simultaneously polish at least two films that form a polishing target surface and are selected from a polysilicon film, a silicon nitride film, and a silicon oxide film.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NANOTECHNOLOGY</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD3dQ3x8HdR8HdTcPZw9fV0dvRR8HV19nD0AzMD_H08gz08_dxBCoJB8v5-LqHOIf5BCi6uYZ7OrjwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JN41wMjQyMLC0tjR0JgIJQAStSnS</recordid><startdate>20091202</startdate><enddate>20091202</enddate><creator>KONNO, TOMOHISA</creator><creator>ANDOU, MICHIAKI</creator><scope>EVB</scope></search><sort><creationdate>20091202</creationdate><title>METHOD OF CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR DEVICE</title><author>KONNO, TOMOHISA ; ANDOU, MICHIAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2128893A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2009</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NANOTECHNOLOGY</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KONNO, TOMOHISA</creatorcontrib><creatorcontrib>ANDOU, MICHIAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KONNO, TOMOHISA</au><au>ANDOU, MICHIAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR DEVICE</title><date>2009-12-02</date><risdate>2009</risdate><abstract>A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass% of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass% of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium hydrogen sulfate, the chemical mechanical polishing aqueous dispersion having a mass ratio (A)/(B) of the component (A) to the component (B) of 1 to 3 and a pH of 4 to 5 and being able to simultaneously polish at least two films that form a polishing target surface and are selected from a polysilicon film, a silicon nitride film, and a silicon oxide film.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP2128893A1 |
| source | esp@cenet |
| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NANOTECHNOLOGY NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | METHOD OF CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T01%3A07%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KONNO,%20TOMOHISA&rft.date=2009-12-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2128893A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |