METHOD OF CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR DEVICE

A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass% of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass% of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium...

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Bibliographische Detailangaben
Hauptverfasser:	KONNO, TOMOHISA, ANDOU, MICHIAKI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NANOTECHNOLOGY NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	A chemical mechanical polishing aqueous dispersion according to the invention includes (A) 0.1 to 4 mass% of colloidal silica having an average particle diameter of 10 to 100 nm, and (B) 0.1 to 3 mass% of at least one ammonium salt selected from ammonium phosphate, diammonium phosphate, and ammonium hydrogen sulfate, the chemical mechanical polishing aqueous dispersion having a mass ratio (A)/(B) of the component (A) to the component (B) of 1 to 3 and a pH of 4 to 5 and being able to simultaneously polish at least two films that form a polishing target surface and are selected from a polysilicon film, a silicon nitride film, and a silicon oxide film.